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Hybride Impuls-Laserdiode mit integrierter Treiberstufe 70 W Spitzenleistung Hybrid Pulsed Laser Diode with Integrated Driver Stage 70 W Peak Power Lead (Pb) Free Product - RoHS Compliant SPL LL90_3
Besondere Merkmale * Kleines kostengunstiges Plastik-Gehause * Integriert sind ein FET und Kondensatoren zur Impulsansteuerung * InAlGaAs/GaAs kompressiv verspannte Quantenfilmstruktur * Hochleistungslaser mit Large-Optical-Cavity" (LOC) Struktur * Nanostack Lasertechnologie beinhaltet mehrere epitaktisch integrierte Emitter * Laserapertur 200 m x 10 m * Schneller Betrieb (< 30 ns Impulsbreite) * Niedrige Versorgungsspannung (< 20 V) Anwendungen * * * * Entfernungsmessung Sicherheit, Uberwachung Beleuchtung, Zundung Test- und Messsysteme
Features Low cost, small size plastic package Integrated FET and capacitors for pulse control Strained InAlGaAs/GaAs QW-structures High power large-optical-cavity laser structure Nanostack laser technology including multiple epitaxially stacked emitters * Laser aperture 200 m x 10 m * High-speed operation (< 30 ns pulse width) * Low supply voltage (< 20 V) Applications * * * * Range finding Security, surveillance Illumination, ignition Testing and measurement * * * * *
Safety advices Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC 60825-1 "Safety of laser products".
Sicherheitshinweise Je nach Betriebsart emittieren diese Bauteile hochkonzentrierte, nicht sichtbare InfrarotStrahlung, die gefahrlich fur das menschliche Auge sein kann. Produkte, die diese Bauteile enthalten, mussen gema den Sicherheitsrichtlinien der IEC-Norm 60825-1 behandelt werden. Typ Type SPL LL90_3
2007-04-04
Emitteranzahl
Opt. Spitzenausgangsleistung Number of Emitters Opt. Peak Power 3 70 W
1
Wellenlange Wavelength 905 nm
Bestellnummer Ordering Code Q65110A1009
SPL LL90_3
Grenzwerte (kurzzeitiger Betrieb) (TA = 25 C) Maximum Ratings (short time operation) Parameter Parameter Spitzenausgangsleistung Peak output power Ladespannung (VG = 15 V) Charge voltage (VG = 15 V) Gate-Spannung Gate voltage Tastverhaltnis Duty cycle Betriebstemperatur Operating temperature Temperatur des pn-Ubergangs1) Junction temperature1) Lagertemperatur Storage temperature Lottemperatur (tmax = 10 s) Soldering temperature (tmax = 10 s)
1)
Symbol Symbol min.
Werte Values max. 80 20 - 20 - - 40 - - 40 - + 20 0.1 + 85 + 105 + 100 + 260 -
Einheit Unit W V V % C C C C
Popt VC VG d.c. Top Tj Tstg Ts
limited due to plastic package, not due to laser chip
2007-04-04
2
SPL LL90_3
Optische Kennwerte (TA = 25 C) Optical Characteristics Parameter Parameter Zentrale Emissionswellenlange1) Emission wavelength1) Spektralbreite (Halbwertsbreite)1) Spectral width (FWHM)1) Spitzenausgangsleistung1) Peak output power1) Ladespannung an der Laserschwelle Charge Voltage at laser threshold Pulsbreite (Halbwertsbreite)1), 2) Pulse width (FWHM)1), 2) Anstiegs- und Abfallzeit (10% ... 90%)1), 2) Rise and fall time (10% ... 90%)1), 2) Jitter (bzgl. Triggersignal und optischem Puls) Jitter (regarding trigger signal and optical pulse) Austrittsoffnung Aperture size
Strahldivergenz (Halbwertsbreite) parallel zum pn-Ubergang1) Beam divergence (FWHM) parallel to pn junction1)
Symbol Symbol min. 895 - 60 4.0 37 7 40
Werte Values typ. 905 7 70 4.5 40 10 45 170 - 12 max. 915 - 80 5.0 43 13 50 500
Einheit Unit nm nm W V ns ns ns ps m2 Grad deg. Grad deg. nm/K K/W V
Popt UC, th tp tr , tf tj wxh
||
200 x 10 - 15 18
Strahldivergenz (Halbwertsbreite) senkrecht zum pn-Ubergang1) Beam divergence (FWHM) perpendicular to pn-junction1)
27
30
33
Temperaturkoeffizient der Wellenlange Temperature coefficient of wavelength Thermischer Widerstand Thermal resistance Einschaltpunkt der Gate-Spannung Switch on gate voltage
1)
/ T
- - -
0.30 200 5.0
0.33 - -
Rth VG on
2)
Werte beziehen sich auf folgende Standardbetriebsbedingung: >50 ns Pulsbreite, 1 kHz Pulswiederholrate, 18.5 V Ladespannung, 15 V Gate-Spannung und 25C Umgebungstemperatur. Der Laser wird angesteuert mit dem MOSFET-Treiber Elantec EL7104C. Values refer to the following standard operating conditions: >50 ns pulse width, 1 kHz pulse repetition rate, 18.5 V charge voltage, 15 V gate voltage and 25 C ambient temperature. The laser is driven by the MOSFET driver Elantec EL7104C. Die Schaltgeschwindigkeit ist abhangig von Strom und Geschwindigkeit, mit der die Gate-Kapazitat (typ. 300 pF) des internen Transistors geladen wird. Kurzere Pulsbreiten, Anstiegs- und Abfallzeiten erhalt man bei Trigger-Pulsbreiten <50 ns. Dies bewirkt jedoch auch eine reduzierte optische Spitzenleistung. Switching speed at gate depends on current and speed, charging the gate capacitance (typ. 300 pF) of the internal transistor. Reduced pulse widths, rise and fall times occur at trigger pulse widths <50 ns. This also reduces the optical peak power.
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SPL LL90_3
Optical output power Popt vs charge voltage Vc (tp = 30 ns)
90 W 80
OHL01909
Optical spectrum, relative intensity Irel vs. wavelength (Popt = 70 W, tp = 30 ns)
100
OHL01910
P opt
1 kHz 70 60 50 25 kHz
I rel
75
50
40 30 20 10 0 0 5 10 15 20 V 25
0 860 880 900 920 nm 940 25
VC Far-field distribution parallel to junction Irel vs. angle || (Popt = 70 W, tp = 30 ns)
1.00
OHL01906
Far-field distribution perpendicular to junction Irel vs. angle (Popt = 70 W, tp = 30 ns)
1.00
OHL01907
I rel
0.75
I rel
0.75
0.50
0.50
0.25
0.25
0 -40 -30 -20 -10 0
10 20 Deg 40
0 -40 -30 -20 -10 0
10 20 Deg 40
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4
SPL LL90_3
Optical output power Popt vs charge voltage Vc (tp = 30 ns, PRF = 1 kHz) at different ambient temperature Tamb
90 W 80
OHL01908
Maximum allowed charge voltage Vc , max vs. ambient temperature Tamb at various rep rates (tp=30 ns, Vc<=19 V, chip temperature<=105 C)
20 V 18
OHL01904
P opt
70 60 50 40 30 20 10 0 0 5
TA = -40 C -20 C 0 C 20 C 40 C 60 C 80 C 100 C
V max C
16 14 12 10 8 6 4 2 10 kHz 20 kHz 30 kHz 40 kHz
10
15
20 V 25
0 -40 -20 0
20 40 60 80
C 120
VC
TA
Peak output power at maximum charge voltage Vc, max vs. ambient temperature Tamb at various rep rates (tp = 30 ns)
80 W 70
OHL01905
P opt
60 50 40 30 20 10 0 -40 -20 0 1 kHz 10 kHz 20 kHz 30 kHz 40 kHz
20 40 60 80
C 120
TA
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SPL LL90_3
Mazeichnung Package Outlines
2.4 (0.094) 0.2 (0.008) 4.9 (0.193) 0.2 (0.008) 1.05 (0.041) 0.3 (0.012) 1.35 (0.053) 0.2 (0.008)
0.3 (0.012) -0.25 (0.010)
+0.4 (0.016)
R0.3 (0.012)
Laser Diode
5 (0.197) 0.2 (0.008) 0 (0.000) 0.1 (0.004)
(12.2 (0.480))
1
2
3 Surface not flat 0 (0.000) 0.1 (0.004) 0 (0.000) 0.1 (0.004)
2.5 (0.098) 0.2 (0.008)
25.2 (0.992) 24.2 (0.953)
0 (0.000) 0.1 (0.004) 2 VC
8.6 (0.339) 0.4 (0.016)
(2.35 (0.093))
1.8 (0.071) 1.2 (0.047)
FET
D S C C
1
Trigger G VG Laser diode
0.5 (0.020) 0.1 (0.004) spacing 2.54 (0.100) R0.25 (0.010)
0.6 (0.024) 0.4 (0.016) 3 GND
GWOY6124
Mae in mm (inch) / Dimensions in mm (inch).
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SPL LL90_3
Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg www.osram-os.com (c) All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
2007-04-04
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